Pure-play GaN foundry technology for RF applications

This paper presents the development of a newly available GaN HEMT technology portfolio and focuses on fabrication, RF characterization, reliability performance and device modeling. Our pure-play GaN Foundry service supports RF MMIC and discrete device applications with comprehensive specifications and wafer acceptance tests. The GaN HEMT technologies enable power amplifier, low-noise amplifier, and RF switch products utilizing supply voltages of 28V and 50V and operational frequencies extending from IEEE standard L- to Ku-band.