Millimeter-wave GaN HEMT model with VDS dependence of CDS for power amplifier applications

A gallium nitride high electron mobility transistor (GaN HEMT) model was developed for millimeter-wave high power amplifier applications. The drain-source voltage dependence of an output capacitance was embedded in the Angelov GaN model to simulate S
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profiles of 80 nm InAlN/GaN HEMTs. Large signal simulation with the developed model explained well a drain-source voltage dependence of the optimum load impedance of load-pull measurements at 90 GHz. The result showed that the model was useful in simulating the power performance of millimeter-wave GaN HEMTs.