Time-of-Flight Measurements on TlBr Detectors

Carrier transport properties of TlBr crystals grown using the Bridgman method were investigated by the time-of-flight technique. The electron and hole mobilities were measured as 20 - 27 cm
²
/Vs and 1.0 - 2.0 cm
²
/Vs respectively at room temperature. The temperature dependence of the electron mobility increases with decreasing temperature as approximated by a well-known empirical formula reflecting the reciprocal of the LO-phonon density.