Sub-22nm scaling of UTB2SOI devices for Multi-Vt applications

The development of a Hybrid Technology and new co-integration schemes of Bulk and SOI devices verify the need to scale sub-22nm FDSOI devices considering BOX engineering including UTBOX, Back-Plane (BP) and Back-Bias (BB) polarization, as breakthroughs to achieve a greater reduction of power consumption. This work presents a Multi-Subband Ensemble Monte Carlo (MSB-EMC) study of the scalability of ultrathin-body and buried oxide (UTB2SOI) devices, showing their potential for Multi-V
_T
designs. Tuning V
_T
modifies the electrical properties of the device and offers a range of I
_on
, I
_off
and DIBL appropriate for different applications.