Spectral sensitivity of a graphene/silicon pn-junction photodetector

We investigate the optical properties of graphene-silicon Schottky barrier diodes composed of chemical vapor deposited (CVD) graphene on n- and p-type silicon (Si) substrates. The diodes fabricated on n-Si substrate exhibit better rectifying behavior compared to p-Si devices in the dark. An ultra-broadband spectral response is achieved for n-Si diodes. The results are compared with the spectral response of a molybdenum disulfide (MoS
₂
) - p-type silicon photodiode.