P-type trigate nano wires: Impact of nano wire thickness and Si0.7Ge0.3 source-drain epitaxy

The impact of nanowire (NW) height and Si
_0.7
Ge
_0.3
:B source-drain (S/D) on the performance of p-type trigate NW is presented. We show that an increase in Si NW height from 14.5nm to 24nm generates up to +30% enhancement in hole effective mobility for a 13nm NW width. Effectiveness of Sio.7Geo.3:B S/D is then discussed for a wide range of NW width (13nm<;W<;218nm) and height (11nm<;H
_Nw
<;24nm). We also highlight short-channel performance of trigate NW with Si
_0.7
Ge
_0.3
:B S/D: +86% I
_on
improvement is observed for H
_Nw
=11nm against only +58% for H
_Nw
=24nm.