Toward understanding of donor-traps-related dispersion phenomena on normally-ON AlGaN/GaN HEMT through transient simulations

In this paper we report the results of a TCAD simulation study performed on AlGaN/GaN High Electron Mobility Transistor (HEMT). The effects of interface states, leading to drain current dispersion phenomena as a result of fast sweep of the drain voltage, are investigated in transient simulations. The virtual drain model is introduced to explain the drain current overshoot due to drain voltage pulsing.