Inx Ga1−x As materials for post CMOS application: Materials and device aspects

High mobility In
x
Ga
1−x
As material is one of the most promising candidates as channel material for post CMOS device applications. In this presentation, In
x
Ga
1−x
As material based MOS capacitors will be studied for possible applications for future III-V MOSFET, TFET and FINFET devices. To improve the gate leakage of the In
x
Ga
1−x
As MOSCAP, the combination of wet chemical treatment and in-situ trimethyl aluminum (TMA) pretreatment was found to be the most effective method for In
x
Ga
1−x
As surface cleaning to achieve a fully inverted In
x
Ga
1−x
As MOSCAP for post CMOS digital applications. In addition, a high-k composite oxide composed of La
2
O
3
and HfO
2
is investigated for In
x
Ga
1−x
As metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La
2
O
3
(0.8 nm)/ HfO
2
(0.8 nm) on In
x
Ga
1−x
As with post deposition annealing at 500 °C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (D
it
) of 7.0 × 10
¹¹
cm
⁻²
eV
⁻¹
, small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved.