Total dose dependence of hot carrier injection effect in the NMOS devices

The total dose dependence of hot carrier injection (HCI) effect in the 0.35µm NMOS Devices was studied in this paper. It was indicated that the threshold voltage shift of NMOS devices with HCI test after 100krad (Si) total dose radiation was more than the devices without radiation. It was related to irradiation annealing effect and hot electrons being trapped by irradiation interface traps.