AlGaN/GaN HEMTs on Si(100) substrate

The Si (100) substrate of AlGaN/GaN HEMTs shows potential of the intimately heterogeneous integration of GaN and Si electronics. It offers new opportunities to increase the functionality and performance of GaN devices. In this paper, we describe our effort on demonstrating the heterogeneous integration of GaN transistor and Si substrate. AlGaN/GaN HEMTs have been fabricated on Si (100) substrate through epitaxial transfer process.