Early effect exposing performance of 28nm HK/MG pMOSFETs under PDA or DPN nitridation treatment

Incorporating a high-k dielectric and metal gate engineering at deep-nano node process is a trend to promote the drive current of MOSFET devices. Nevertheless lots of challenges crowdedly reveal either process technologies or device model establishment. To reduce the gate leakage and enhance the device reliability, the nitridation process after high-k deposition will be utilized, but causing the difficulty in device model construction. One of the issues is Early effect which is not intersected at one point. The vertical field in gate node hugely contributes its influence in the entire electrical field in device operation.