Structure Dependence of the Hot-Carrier Degraded Region in Deep Submicron MOS Devices

This paper investigates device degradation from the viewpoint of δ L where hot carrier generate the surface states, Ness. The structure dependence of generated NSS distribution and δ L will be pointed out. Among them, δ L for GOLD is found to be smaller than for other structures, and δ L will also be discussed as a greater indicator of device degradation rather than the total Nss.