Modeling and design optimization of ReRAM

Resistive switching memories (ReRAM) have been widely studied for applications in next-generation data storage and neurormorphic computing systems. To enable device-circuit-system co-design and optimization, a SPICE model of ReRAM that can reproduce the device characteristics in circuit simulations is needed. In this paper, we present a novel tool for ReRAM design including a physics-based SPICE model, the model parameters extraction strategy, as well as the system assessment method. This physics-based SPICE model can capture all the essential features of HfO
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-based ReRAM including the DC/AC and multi-level switching behaviors, switching reliability, and intrinsic device variations. A strategy is developed to extract the critical model parameters from the fabricated ReRAM devices. A variety of electrical measurements on various ReRAMs are performed to verify and calibrate the model. The assessment method based on the experimentally verified SPICE model can be applied to explore a wide range of applications including: 1) variation-aware and reliability-emphasized system design; 2) system performance evaluation; 3) array architecture optimization. This verified design tool not only enables system design but also enables system optimization that capitalizes on device/circuit interaction for both data storage and neuromorphic computing applications.