Performance of RFMOS/sup TM/ for 1.9 GHz CDMA operation

We report the first measured ACPR properties of Texas Instruments' RFMOS/sup TM/ power transistor technology at 1.9 GHz. It demonstrated a 49% PAE with ACPR=-45 dBc for V/sub DS/=3.6 V. The performance results are presented as a function of bias and tuning and demonstrate that the RFMOS/sup TM/ technology has excellent potential for CDMA applications.