Deadtime Effect on GaN-Based Synchronous Boost Converter and Analytical Model for Optimal Deadtime Selection

It is widely acknowledged that gallium nitride (GaN)-based power switching devices are superior to conventional silicon (Si) devices in terms of lower semiconductor loss and faster switching speed. However, the deadtime related losses in GaN HEMT-based converters can be detrimental if not optimized, especially when operating at very high switching frequencies. This paper proposes an original analytical model for deadtime optimization for the GaN converters. The proposed model is more accurate than conventional deadtime optimization methods used in Si converters. A GaN-based synchronous boost converter is used as a case study. Circuit simulation and experimental tests are successfully performed to verify the analysis and proposed model.