Impact of low pressure long throw sputtering method on submicron copper metallization

Cu metallization technology using sputtered Cu wiring and W-plug is developed. Submicron trenches for wiring with up to 0.4 /spl mu/m width are filled with Cu by a low-pressure long-throw sputtering method followed by a reflow process. Blanket-W CVD with a sputtered W barrier is used for via filling. Using these technologies, multilevel Cu interconnect test structures are fabricated successfully.