Integration of organic low-k material with Cu-damascene employing novel process

In order to realize the fabrication of an ultra-large-scale-integrated (ULSI) circuit with high performance, a novel integration process for Cu-damascene structures employing a low dielectric constant (low-k) material as interlayer dielectric is proposed. In this process, a USG formed organic low-k material is used as a hard mask and a CMP stopper. This enables us to simplify the total process and fabricate two-level Cu metallization successfully.