Investigation of the Turn-ON of T-RAM Cells Under Transient Conditions

This paper presents an experimental investigation of the turn-ON of nanoscale T-RAM cells under the transient conditions given by the depletion of the
$p$
-base from holes. Data reveal that hole depletion increases the dynamic turn-ON voltage of the device for a stretch of time depending on the gate and anode bias during the hold phase and on the gate voltage used for device sensing. The results are explained considering that the gate and anode biases during hold affect the rate of hole generation bringing the device back to its equilibrium condition, while the gate voltage applied to sense the state of the gated-thyristor determines the
$p$
-base potential and, therefore, the amount of holes in the
$p$
-base required to turn the device on.