0.026µm2 high performance Embedded DRAM in 22nm technology for server and SOC applications

This paper presents the industry's smallest Embedded Dynamic Random Access Memory (eDRAM) implemented in IBM's 22nm SOI technology. The bit cell area of 0.026µm
²
achieves ∼60% scaling over the previous generation with deep trench (DT) capacitance optimized for performance and retention requirements. We report, for the first time, the asymmetric embedded stressor, cavity implant, through gate implant, and substrate n-band innovations to maintain aggressive cell scaling for the 22nm eDRAM technology.