Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology

The effectiveness of amorphous metal gate (MG) in suppressing low-frequency noise (LFN) for FinFETs has been thoroughly investigated. It was demonstrated that the amorphous TaSiN MGs with various atomic compositions provide flexible tuning of threshold voltage (V_t) as well as small V_t variability, namely A^Vt. It was found that the TaSiN-MG FinFETs exhibit drastic reduction of LFN in comparison to the poly-crystalline TiN MG case. Modelling by 3D-TCAD reveals that work function variation (WFV) of the MG has a significant impact on LFN generation. Suppression of A_Vt and LFN is highly beneficial to conduct further scaling of analog/digital components in SoC.