The Super-Lattice Castellated Field Effect Transistor (SLCFET): A novel high performance Transistor topology ideal for RF switching

NGES reports the development of a novel transistor structure based on a GaN super-lattice channel with a 3D gate, named the SLCFET (Super-Lattice Castellated Field Effect Transistor). Transistor measurements provided median values of I
MAX
>2.7 A/mm, V
PINCH
= −8V, with R
ON
=0.41 Ω-mm and C
OFF
=0.19 pF/mm, for an RF switch FOM of F
CO
=2.1 THz.