Injection currents analysis of p/sup +//n-buffer junction

Injection currents analysis of p/sup +//n buffer junction is presented, taking into account the variation of the carrier lifetime with injection level which allows a unified interpretation of the junction current for all injection levels. The injected carrier density and injection efficiency of the anode are calculated as a function of the current density with the low level lifetime as a parameter for different doping levels of the buffer layer. The analytical results agree well with simulations.