High-speed GaN growth and compositional control of GaN-AlGaN superlattice quasi-ternary compounds by RF-radical source molecular beam epitaxy

Novel growth technologies of III-nitrides for fabricating optical devices by molecular beam epitaxy using RF-plasma excited nitrogen (RF-MBE) were investigated. A relatively high-growth rate, up to 1.4 /spl mu/m/h of GaN with high-electrical and high-optical quality was obtained. The concept of AlGaN quasi-ternary (QT) compounds, consisting of GaN-AlGaN short period superlattice, was demonstrated and the Al composition was controlled with a shutter control method in the range of 0-0.47. Using the QT technology, a GaN-Al/sub 0.07/Ga/sub 0.93/3N-Al/sub 0.3/Ga/sub 0.7/N multiquantum-well heterostructure was fabricated to show the effectiveness of the method.