Characterisation of SiNx-HgCdTe interface in metal-insulator-semiconductor structure

In this paper, we report results of a study of SiN
x
films deposited on HgCdTe epitaxial layers. Hydrogenated amorphous SiN
x
films were deposited by inductively-coupled plasma-enhanced chemical vapour deposition at relatively low substrate temperatures (80°C-100°C). The capacitance-voltage characteristics of SïNJn-Hg
0.68
Cd
0.32
Te metal-insulator-semiconductor structures indicated that Si-rich SiN
x
films deposited at 100°C can be employed as electrical passivation layers.