Thermal reliability analysis of non-gate dielectric film in IEC-GCT

A new concept, non-gate dielectric film (NGD film) is proposed, to describe the special role of anode insulator film on a recently reported power semiconductor, IEC-GCT. Thermal reliability analysis, including thermal stress and heat conductivity, show that aluminum nitride, polycrystalline silicon and borosilicate glass are more suitable as anode non-gate dielectric film than SiO
₂
. Thermal stress and temperature distribution between the NGD film and multi-layer metallization electrodes or silicon wafer, has been numerically simulated with finite element analysis tools ANSYS. The results agree with the theoretical analysis. Consideration with film manufacture cost and process match with IEC-GCT, polycrystalline silicon and borosilicate glass are proposed as the optimal non-gate dielectric films.