Ultraflexible Tactile Piezoelectric Sensor Based on Low-Temperature Polycrystalline Silicon Thin-Film Transistor Technology

In this paper, we present an ultraflexible tactile sensor, in a piezo-eletricoxide-semiconductor FET configuration, composed by a poly[vinylidenefluoride-co-trifluoroethylene] capacitor with an embedded readout circuitry, based on nMOS polysilicon electronics, integrated directly on polyimide. The ultraflexible device is designed according to an extended gate configuration. The sensor exhibits enhanced piezoelectric properties, thanks to the optimization of the poling procedure (with electric field up to 3 MV/cm), reaching a final piezoelectric coefficient d
₃₃
of 47 pC/N. The device has been electromechanically tested by applying perpendicular forces with a minishaker. The tactile sensor, biased in a common-source arrangement, shows a linear response to increasing sinusoidal stimuli (up to 2 N) and increasing operating frequencies (up to 1200 Hz), obtaining a response up to 430 mV/N at 200 Hz for the sensor with the highest value of d
₃₃
. The sensor performances were also tested after several cycles of controlled bending in different amount of humidity with the intent to investigate the device behavior in real conditions.