Process development and optimization for high temperature endurable flip chip interconnection in SiC high power module

Integrated Circuited devices fabricated on SiC instead of Si allows higher operating temperatures for the future automotive, aerospace, and green and renewable energy industry. With higher temperature interfaces and contacts between the chip and package, new packaging interconnection materials able to sustain high temperature operations need to be explored. This work demonstrates the assembly of a dual-side cooled high power 3-phase inverter module that was 32mm × 30mm with 6 SiC DMOSFET attached by flip chip technology. Rheological modeling using FVM (Finite Volume Method) based simulation was carried out and validated for the dispense pattern of silver sintering material used in high power electronics flip chip attach. Further details of assembly process flow, assembly challenges, reliability assessment and future works will be discussed in the full manuscript.