High mobility w-gate nanowire P-FET on cSGOI substrates obtained by Ge enrichment technique

Ω-gate nanowires (NW) P-FETs on compressively-strained-SiGe-on-insulator (cSGOI) substrate obtained by the Ge enrichment technique are presented. Effectiveness of cSGOI channel is demonstrated for ultra-scaled P-FET NW (L
_G
=15nm and W
_NW
=25nm) with an outstanding I
_ON
current (I
_ON
=860μA/μm at I
_OFF
=140nA/μm) and a good electrostatics immunity (DIBL=110mV/V). For the first time, Si
_0.8
Ge
_0.2
-channel transistors highlight a mobility improvement for narrow NWs down to short gate length compared to Si one (92% for L
_G
=30nm). The hole mobility improvement provided by the strong uniaxial compressive strain coming from cSiGe and cCESL leads to an ION current improvement of 95% at L
_G
=15nm.