A novel concept for fast recovery diodes having junction charge extraction (JCE) regions

A novel concept for achievement of superior performance in modern fast power diodes is presented in this paper. The junction charge extraction diode (JCE) is based on the integration of low and high lifetime regions in a single structure using masked helium irradiation. This new technique enables us to achieve improved static and dynamic characteristics when compared to uniform and axial lifetime controlled diodes. Simulation and experimental results are presented in this paper to verify the new concept.