Influence of band parameter of gate dielectrics on the ballistic performance at same EOT

Different high-k dielectrics have been supposed to provide same device performance if their physical thickness are not equal but equivalent, called “Equivalent oxide thickness” (EOT). For ultra thin body (UTB) devices like XOI, despite of EOT, conduction band offset (ΔE
C
) at gate oxide-channel interface dominates the ballistic performance. In case of In
0.3
Ga
0.7
Sb XOI nFET using Al
2
O
3
and HfO
2
with 0.5 nm EOT, we show the threshold voltage decreases and the subthreshold slope (SS) increases with increase in ΔE
C
.