Turn-off characteristics of 1000 V SiC gate-turn-off thyristors

10 A//spl sim/175 V switching has been achieved using SiC GTOs. A 3 A/350 V package demonstrated 130 ns and 55 ns rise and fall times with turn-off losses of 3.2 /spl mu/J. Switching times increased by /spl sim/3/spl times/ at 250/spl deg/C. Devices exhibited a dV/dt limit of 700 V//spl mu/s. MOS-gated turn-off of 2 A/100 V is also demonstrated for the first time using a SiC GTO and Si MOSFET in a hybrid MTO/sup TM/ configuration.