Current-controlled negative resistance (CCNR) in SiC P-i-N rectifiers

This paper presents an experimental demonstration of a current-controlled negative resistance (CCNR) in the forward characteristics of 6H-SiC P-i-N rectifiers. These forward characteristics indicate that the poor electrical performance of SiC diodes arises because conductivity modulation is not yet established. The cause of this behaviour appears to be high defect densities and low minority carrier lifetime in the lightly doped drift region. N/sup +/P junctions exhibit excellent forward characteristics with forward drop of 2.8 V at 100 A/cm/sup 2/ and 3.9 V at 1000 A/cm/sup 2/ without entering the CCNR mode when traps have been filled prior to the measurement.