The 4500 V-750 A planar gate press pack IEGT

This paper presents the 4500 V-750 A planar gate injection enhanced gate transistor (P-IEGT), which has a wide cell width. By increasing the gate width, the planar devices achieve the carrier injection enhancement effect. The wide gate structure shows better characteristics for high voltage planar devices than the conventional IGBT. The on-state voltage drop is 3.8 V at 50 A/cm/sup 2/, T/sub j/=25/spl deg/C. The value is low enough for a 4500 V rated MOS gate transistor. We achieve turn off capability at V/sub ce/ (peak)=4000 V, I/sub c/=1600 A without adding a dV/dt snubber at T/sub j/=125/spl deg/C. The results show that the P-IEGT has a very wide SOA.