On-chip stacked punchthrough diode design for 900V power MOSFET gate ESD protection

To protect power MOSFET gate oxide from ESD in fundamentally, On-chip ESD protecting circuits are required. In this paper, stacked punchthrough diode made of doped polysilicon between gate pad and source pad is suggested for 900 V power MOSFET gate ESD protection. The suggested device was designed and analyzed in electrical characteristics by TCAD simulation. Based on this analysis, stacked punchthrough diode for 900 V power MOSFET gate ESD protection is optimized.