AU-SWCNTS-HF Schottky diodes fabricated by dielectrophoresis

In this paper we report a single-walled carbon nanotubes (SWCNTs) Schottky diodes fabricated by DEP technique. The device was made of semiconducting SWCNTs (s-SWCNTs) contacting with asymmetric-work-function metal electrodes of Au and Hf, and the properties were measured and analyzed in detail. The results show that our device has a good rectifying characteristic and could be tuned by a back gate voltage. Above 220K, thermionic emission is the dominant transport mechanism, while tunneling begins to lead below 220K. And the Schottky barrier height was calculated to be 0.48eV.