The nitrogen incorporated ZrO2 charge trapping layers in nonvolatile memory applications

In the study, the MOHOS-type memory using ZrO
2
trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900°C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.