FIB methodologies to analyze buried defects in wafer manufacture process

Buried defects were hardly analyzed due to invisibility in defect analysis tool - dual beam FIB (Focus Ion Beam) system- before; two methodologies were presented to analyze two types' buried defects in this paper. One method locate defects by combining defect image and layout analysis, the other method locate defect by nearby visible structure under SEM and OM. Two cases were given to show how the methodologies worked.