Low-frequency noise analysis of DRAM peripheral transistors with La cap

In this paper, the impact of the thermal budget on the low-frequency (LF) noise of DRAM peripheral n-channel transistors with La cap implemented in the high-κ/metal gate stack is investigated. Confirmation of previous reports on the beneficial impact of La in-diffusion on the oxide trap density is obtained. At the same time, a peak in the oxide trap profile is demonstrated close to the SiO
₂
/HfO
₂
interface.