An simple approach to evaluate TID response in High Voltage MOSFET for 65nm flash technology

Two straightforward parameter extraction methods are proposed to characterize the main and parasitic transistor's Total Ionizing Dose (TID) effect of High Voltage nMOSFET (HV-MOS) for 65nm flash technology. During radiation, the V
_th
and drain current of the main and parasitic transistor were extracted separately. Clear understanding of the impact of each transistor's radiation response is helpful to optimize the design of radiation-hard flash memory.