Multilevel resistive switching in HfOx/TiOx/HfOx/TiOx multilayer-based RRAM with high reliability

Multilevel cell (MLC) characteristics of HfOx/TiOx/HfOx/TiOx multilayer -based RRAM were studied for the data storage application. The multilevel resistive switching operation was obtained by controlling the reset pulse voltage of the multilayer-based RRAM. We have demonstrated 8-level resistive switching behavior. The reliability of the MLC operation has been examined, about 10
⁴
s of data retention at 150 °C is achieved, Sufficient window margin is achieved even the HRS decreases with the increasing temperature from 30 to 150°C.