Study of DC sputtered Cu2O growth and p-Cu2O/ n-IGZO heterojunctions

Cu
₂
O thin films were deposited on glass substrates by DC magnetron sputtering. The effects of the ratio of Ar/O
₂
and sputtering pressure on the structure of the formed copper oxide films were investigated. It is found that with increase of O
₂
ratio and sputtering pressure, the formed films change from a mixture of Cu and Cu
₂
O to pure CuO film. It is also found that the film has a preferred Cu
₂
O (200) orientation and cluster surface morphology. The fabricated p-Cu
₂
O/n-IGZO heterojunction has a rectifying I-V characteristic and exhibits a response to UV illumination.