Low noise Si based monolithic transimpedance amplifiers for 10 Gbps, 40 Gbps and 100 Gbps applications

Design information is given for developing microwave and millimeter-wave silicon based low noise broadband monolithic transimpedance amplifiers. The required layout optimizations for SiGe HBTs and CMOS devices are described and the foundry selection criteria we employed are reported. An efficient high frequency passive devices implementation and high frequency connectivity solutions with external circuitry are also considered. The full design of two CMOS monolithic circuits and three HBT ultra wide band MMICs circuits under fabrication is then described.