L $_{\mathrm {g}} = 80$ -nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

We report on L
_g
= 80-nm trigate quantumwell InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with record combination of subthreshold swing, transconductance and ON-current performance. The device features a multilayer cap design, bilayer Al
₂
O
₃
/HfO
₂
(0.7/2 nm) gate-stack by atomic layer deposition and dry etched In
_0.53
Ga
_0.47
As fin. An L
_g
= 80-nm trigate MOSFET with fin-width (W
_fin
) = 30 nm and fin-height (H
_fin
) = 20 nm exhibits excellent performance, such as ON-resistance (RON) = 220 Ω-μm, subthreshold swing (S) = 82 mV/dec, and drain-induced-barrier lowering = 10 mV/V at V
_DS
= 0.5 V. Besides, the device exhibits record values of maximum transconductance (g
_{m_max}
) = 1800 μS/μm and I
_ON
= 0.41 mA/μm at V
_DS
= 0.5 V, and a record combination of g
_{m_max}
and S in any III-V nonplanar MOSFET technology.