Deposition of crystalline silicon thin films in electrically asymmetric capacitively coupled plasmas

Capacitively coupled radio frequency (CCRF) discharges in hydrogen diluted silane are typically used for the deposition of silicon thin films on large area substrates. In order to improve the properties of these films for specific applications such as photovoltaics, a detailed understanding of the plasma dynamics is required. Furthermore, advanced methods for the control of the plasma surface interaction, e.g. of the energy and the total flux of ions and the flux ratio of ions to neutral radicals, are highly desired.