3D self-heating electro-thermal model of multi-die IC

This paper addresses a development of self-heating electro-thermal model of a system-in-package (SiP) occupying several silicon dies within one IC package. Proposed model maintains very high accuracy of modeled parameters in the wide range of dynamic temperature fluctuations, which brings the thermal simulations of state-of-the-art ICs much closer to the real scenario. Presented work also introduces an alternative approach to simulating electro-thermal properties of selected SiP using pseudo-transient simulations which radically reduces required simulation time.