Study of gate oxide leakage and charge trapping in ZMR and SIMOX SOI MOSFETs

Characterization of gate oxides grown on zone-melting-recrystallized (ZMR) and silicon-implanted-with-oxygen (SIMOX) films indicates oxide leakage and charge trapping to be several orders of magnitude greater than their bulk silicon counterparts. Electron trapping is the primary trapping mechanism for constant current injection in the gate oxides of these SOI (silicon-on-insulator) films. Similar type of traps are observed in ZMR and SIMOX oxides.<
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