Study of device physics in impact ionisation MOSFET using synopsys TCAD tools

Impact ionisation MOSFET (IMOS) is a new and promising alternative for conventional MOSFET owing to its low subthreshold slope. With the aid of TCAD simulation tools and the resultant figures, the basic physics behind IMOS operation has been studied in this paper. The I
_d
-V
_g
curve resulting from this study having a subthreshold slope of 1.272mV/dec is also presented in the paper.