Application of real time in-situ interferometry for the observation of GaN/Si MOVPE growth process

In this paper the wide range of application of real time in situ reflectance signal observation based on four GaN on Si samples grown is shown. Mean reflectance value of oscillations for GaN growth and recovery times were extracted from reflectance traces acquired in situ. Moreover, RMS variation of grown samples were correlated with in situ monitoring that were in good agreement with presented model. We present what additional information can be extracted by insitu interferometry.