79GHz CMOS power amplifier using temperature compensation bias

We proposed a temperature compensation method for a CMOS power amplifier (PA) without an external feedback circuit. The 79GHz PA using temperature compensation bias was fabricated using 40nm CMOS technology and suppressed the variation of the small-signal gain and the degradation of linearity to within 0.6dB in the temperature range from 10 to 100 C with a fixed bias voltage. The PA using temperature compensation bias achieved a small-signal gain of 6.0dB, a 23.5GHz bandwidth and a saturated output power (Psat) of 6.3dBm with 24.8mW power consumption at 100 C.