Analysis and modeling of skin and proximity effects for millimeter-wave inductors design in nanoscale Si CMOS

Analytical models of skin effect and proximity effect were developed in this paper to calculate and predict the frequency dependent resistance, Re(Z
_in
) and Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Z
_in
) and Q measured from mm-wave inductor (L
_dc
~150pH, Q
_max
~17, f
_SR
>>65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.